Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas. 2000.
dopant distribution profile — legiravimo priemaišų profilis statusas T sritis radioelektronika atitikmenys: angl. dopant distribution profile; impurity doping profile vok. Störstellendotierungsprofil, n rus. профиль распределения легирующей примеси, m pranc. profil d impureté … Radioelektronikos terminų žodynas
Störstellendotierungsprofil — legiravimo priemaišų profilis statusas T sritis radioelektronika atitikmenys: angl. dopant distribution profile; impurity doping profile vok. Störstellendotierungsprofil, n rus. профиль распределения легирующей примеси, m pranc. profil d impureté … Radioelektronikos terminų žodynas
legiravimo priemaišų profilis — statusas T sritis radioelektronika atitikmenys: angl. dopant distribution profile; impurity doping profile vok. Störstellendotierungsprofil, n rus. профиль распределения легирующей примеси, m pranc. profil d impureté dopante, m … Radioelektronikos terminų žodynas
profil d'impureté dopante — legiravimo priemaišų profilis statusas T sritis radioelektronika atitikmenys: angl. dopant distribution profile; impurity doping profile vok. Störstellendotierungsprofil, n rus. профиль распределения легирующей примеси, m pranc. profil d impureté … Radioelektronikos terminų žodynas
профиль распределения легирующей примеси — legiravimo priemaišų profilis statusas T sritis radioelektronika atitikmenys: angl. dopant distribution profile; impurity doping profile vok. Störstellendotierungsprofil, n rus. профиль распределения легирующей примеси, m pranc. profil d impureté … Radioelektronikos terminų žodynas
Capacitance voltage profiling — The CV , or more correctly C V , in C V profiling, stands for capacitance voltage, and refers to a technique used for characterization of semiconductor materials and devices. The technique uses a metal semiconductor junction (Schottky barrier) or … Wikipedia
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